Abstract
AbstractWe have studied the growth of GaSb quantum dots (QDs) on GaAs by droplet epitaxy. First, Ga droplets are formed on GaAs and then exposed to Sb flux to be clad by large granular crystals of Sb; by annealing this wafer at 380 °C, GaSb QDs are successfully formed. By atomic force microscopic studies, it is found that GaSb QDs thus formed are on average 9.2 nm in height, 74 nm in diameter, and 7.8 × 109 cm2 in density. Photoluminescence properties of these QDs have been also investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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