Abstract
AbstractWe have studied the growth of GaSb quantum dots (QDs) on GaAs (311)A surfaces by droplet epitaxy. By atomic force microscopic studies, it was found that smaller and denser GaSb QDs are formed on GaAs (311)A than (100). We also tried to grow InSb QDs by droplet epitaxy. On a GaAs (100) substrate, a large ring‐like structure is formed instead of a QD structure. In contrast, InSb QDs were successfully grown on a GaAs (311)A substrate. Photoluminescence properties of these QDs were also investigated. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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