Abstract
A horizontal gradient-freeze technique has been developed for growth of GaAs ingots with high free electron concentrations while minimising the crystal defects associated with large quantities of dopant. With Si as dopant satisfactory crystal quality was maintained at carrier concentrations up to 4 × 10 18 cm -3. Attempts to extend this range upwards by supplementing the Si doping with other elements showed that the incorporation of one dopant is influenced by the presence of others. Higher carrier concentrations were obtained with Si alone than with Si + Se together.
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