Abstract
The growth of GaAs by molecular-beam epitaxy using trimethylgallium (TMGa) or metal gallium, and trisdimethylaminoarsine (TDMAAs) was investigated in relation to carbon incorporation into the epitaxial layers and the growth rate. In the case using TMGa, the high concentration of residual carbon (2 × 10 19 cm −3) in GaAs grown at 490°C rapidly decreased along with an increase in the TDMAAs flux intensity, eventually reaching (1–2) × 10 16 cm −3. The growth rate of GaAs grown by using metal Ga or TMGa, decreased along with increasing TDMAAs flux intensity. These results indicate that the species derived from TDMAAs adsorbed on the growing surface and strongly influenced the adsorption/desorption of Ga adatoms as well as TMGa.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.