Abstract
Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550°C on sapphire showed resistivity and hole concentrations of 38Ωcm and 3.9×1017cm−3, respectively. ZnO films also showed a p-type behavior on p-Si with better electrical properties. ZnO homojunctions synthesized by in situ deposition of Ga–N codoped p-ZnO layer on Ga doped n-ZnO layer showed clear p-n diode characteristics. Low temperature photoluminescence spectra of codoped films also revealed a dominant peak at 3.12eV. The codoped films showed a dense columnar structure with a c-axis preferred orientation.
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