Abstract
The growth of an epitaxial ZnO thin film on a Si substrate by oxidation of an epitaxial ZnS film is a novel method and we are reporting it for the first time. The merits of using the Si substrate are to make the driving voltage of light-emitting diodes (LEDs) lower and the cost of the LEDs less expensive than that using a sapphire substrate. In this study, the epitaxial ZnO thin film could be successfully grown on the Si substrate. The epitaxial films showed a strong near-ultraviolet emission with a peak at around 3.32 eV at room temperature under 325 nm excitation.
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