Abstract
Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(001) substrates by gas source molecular beam epitaxy using radio-frequency N2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9min. Cubic AlxGa1−xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.
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