Abstract
Cubic and hexagonal GaN epilayers were successfully grown on GaAs substrates by gas source molecular beam epitaxy using a microwave plasma nitrogen source. These GaN epilayers showed quite strong cathodoluminescence emission. X-ray and electron diffraction analyses indicated the improved crystalline quality, compared with GaN epilayers grown using dimetylhydrazine. GaN epilayers were also grown, by the same method, on 3C-SiC substrates, which have a lattice constant much closer to GaN than GaAs.
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