Abstract
The article presents a study for liquid phase diffusion (LPD) growth of compositionally graded, germanium-rich Si x Ge 1− x single crystals of 25 mm in diameter for use as lattice-matched substrates for the growth of Si x Ge 1− x single crystals by liquid phase electropitaxy (LPEE), or traveling heater method (THM). Grown crystals were characterized by microscopic examination after chemical etching for delineation of the degree of single crystallinity and growth striations. Compositional mapping of selected crystals was performed by using electron probe micro analysis (EPMA) as well as energy dispersive X-ray analysis (EDX). It was shown that the LPD technique can be utilized to obtain Si x Ge 1− x single crystals up to 6–8 at% Si with uniform radial composition distribution.
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