Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular beam epitaxy

Abstract

AlN/SiC/AlN quantum well structures have been grown on Si(111) by molecular beam epitaxy at 700 °C. The microstructure is single-crystal wurtzite AlN and cubic SiC with stacking sequence disorder. Depth profiles taken by Auger electron spectroscopy indicate that the ratio of Si to C is about 5:4. Layers with lower carbon content exhibit regions with five-fold superstructures. Fourier transform infrared spectroscopy confirms the presence of Al-N and Si-C bonds. Our work demonstrates the feasibility of a low-temperature synthesis route for epitaxial SiC and AlN/SiC heterostructures on Si.