Abstract
It has been shown that irradiation with atomic hydrogen during the growth of GaAs in molecular beam epitaxy (MBE) promotes an ideal layer-by-layer two-dimensional nucleation and step-flow growth mode on GaAs(001) substrates, thereby resulting in atomically flat surfaces. Fundamentally important observations related to elementary processes have been presented based on the reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements. A growth model for the atomic hydrogen-assisted GaAs MBE has been postulated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
