Abstract
It has been shown that a continual irradiation of atomic H generated by a hydrogen cracker during the growth of GaAs in molecular beam epitaxy (MBE) serves to promote a step-flow growth mode on GaAs(001) substrates. Fundamentally important observations related to the elementary processes of the growth have been presented based on reflection high-energy electron diffraction (RHEED) measurements. A growth model for the atomic hydrogen-assisted GaAs MBE is therein proposed.
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