Abstract
It has been shown that irradiation with atomic hydrogen during the growth of GaAs in molecular beam epitaxy (MBE) promotes an ideal layer-by-layer two-dimensional nucleation and step-flow growth mode on GaAs(001) substrates, thereby resulting in atomically flat surfaces. Fundamentally important observations related to elementary processes have been presented based on the reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements. A growth model for the atomic hydrogen-assisted GaAs MBE has been postulated.
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