Abstract
We have investigated the mechanisms of the epitaxial growth of InP, GaP, and GaAs x P 1− x (0.50< x<0.67) using a mass-separated low-energy monovalent P + ion beam and molecular beams with the other constituent elements. The growth rates ( R) were found to depend on the surface composition of the growing films as well as on the P + ion energy ( E p). In addition, it was also found that the film composition ratio x for GaAs xP 1− x increased with E p. A growth model is presented, in which the growth rate is related to the sputtering yield of each constituent element due to a P + ion. The sputtering yields of In, Ga, and P and their threshold energies ( E th) were determined from the experimental data on the growth rates for InP and GaP. Using the sputtering yields of Ga and P for GaP, the calculated growth rates and composition ratios x for GaAs x P 1− x are in good agreement with the experimental results.
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