Abstract
AbstractWe grew nonpolar m ‐plane GaN by selective area growth and epitaxial lateral overgrowth. In this report, we investigated the growth mechanism of m ‐plane GaN on a patterned a ‐plane sapphire substrate (a ‐PSS) without an SiO2 mask. With the control of the anisotropic growth rate of c ‐plane GaN on an original a ‐plane sapphire surface and on a c ‐plane‐like sapphire sidewall in the a ‐PSS, c ‐plane GaN was grown only on the c ‐plane‐like sapphire sidewall, resulting in a pure‐oriented m ‐plane GaN layer on the a ‐PSS. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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