Abstract
AbstractNonpolar (11$ \bar 2 $0) a ‐plane GaN thin films were grown on r ‐plane (1$ \bar 1 $02) sapphire substrates by low‐pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the a ‐plane GaN films were investigated by means of polarized Raman scattering spectra in backscattering configurations. The experimental results show that there are strong anisotropic in‐plane stresses within the epitaxial a ‐plane GaN films by calculating the corresponding stress tensors. The temperature dependence of Raman scattering spectra was studied in the range from 100 K to 550 K. The measurements reveal that the Raman phonon frequencies decrease with increasing temperature. The temperature at which nonpolar a ‐plane GaN films are strain free is discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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