Abstract
Ga desorption and GaN growth kinetics by molecular beam epitaxy using Ga and NH3 fluxes under Ga-rich conditions were investigated. Ga desorption activation energy of 2.4 eV from (0001)GaN was measured. It was experimentally determined that the growth rate depends on the NH3 pressure as Pn, where n increased with increasing substrate temperature from 0.5 (below 760 °C) to 1 (above 800 °C). A kinetic model of growth in the framework of the mean field kinetic equations has been developed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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