Growth kinetics and electrical characteristics of ultra-thin pyrogenic silicon oxide

Abstract

Ultra-thin (3 to 6.5 nm) SiO 2 layers are grown on ultra-clean Si surfaces by thermal oxidation in steam at low temperatures (650–700°C). The growth characteristics in the ultra-thin oxide thickness region are examined and it is shown that uniform oxide layers can be grown reproducible. It is demonstrated that these pyrogenic SiO 2 layers grown on ultra-clean Si surfaces have a high yield and a reliability that is at least comparable with those of dry oxides.