Abstract
AbstractThe geometrical structure of native silicon oxide and ultra thin thermal silicon oxides grown in situ on a Si(100) wafer have been investigated by surface extended x‐ray absorption fine structure (SEXAFS) above the oxygen K absorption edge (∼530 eV). The SiO bond length of the native oxide is identical with that of α‐quartz and amorphous silica and the SiO bond length of the thermal oxides corresponds closely to that of β‐quartz which is the medium temperature modification of α‐quartz.
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