Abstract
Summary form only given. The time-dependent dielectric breakdown (TDDB) characteristics and MOS properties and reliability of ultrathin (65-AA) LPCVD silicon oxides annealed in N/sub 2/ ambient have been studied and compared with those of thermal oxide of identical thickness. It is shown that the devices with CVD oxide have much lower defect densities and are less susceptible to interface state generation, charge trapping, and transconductance degradation than those with thermal oxide. The results indicate that CVD oxide is a promising candidate for future ULSI technology, for which reliable ultrathin gate dielectrics are required. >
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