Abstract
High quality CdZnTe films were deposited on polished CdZnTe film, Si wafer and fluorine doped tin oxide (FTO) glass by close spaced sublimation (CSS) method. The influences of different substrates on the growth rate, composition, structural and electrical properties of CdZnTe films were investigated. The results showed that the CdZnTe film prepared on the polished CdZnTe film substrate had a higher growth rate and a better crystalline quality. The film prepared on the polished CdZnTe film substrate also exhibited lower leakage current, which is promising for high energy particle detection.
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