Abstract
Nanocrystalline Ga 0.81In 0.19Sb embedded in silica film was grown by radio frequency (RF) magnetron co-sputtering. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) strongly support the existence of nanocrystalline Ga 0.81In 0.19Sb in the silica film. X-ray photoelectron spectroscopy further shows that the strong affinity of Si with oxygen produces a silicon dioxide layer wrapping the nanoparticles of the Ga 0.62In 0.38Sb. The room temperature optical transmission spectra show that the absorption edge exhibits a large blue shift of about 3.38 eV compared with that of the bulk semiconductor, suggesting the existence a of quantum confinement effect.
Published Version
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