Growth and optical properties of Eu 3+-doped La 3Ga 5SiO 14 single crystal

Abstract

Europium-doped La 3Ga 5SiO 14 single crystals have been grown along c-axis by using the Czochralski method. The structure of the crystal has been studied by X-ray powder diffraction (XRPD) method. The segregation coefficients of Eu 3+ in La 3Ga 5SiO 14 crystal were measured by X-ray fluorescence analysis (XRF). For the 1 mol% doping level in the melt, the distribution coefficient of Eu 3+ was determined to be 0.558 at%. Transmittance spectrum were carried out in the range of 190–3200 nm at room temperature. The fluorescence properties were investigated.