Abstract
In this paper, single crystals of dysprosium (Dy) doped La3Ga5SiO14 have been grown along c-axis by using the Czochralski method. The structure of the crystal has been studied by X-ray powder diffraction method and it is found that the crystal structure still belongs to the space group P321, and the unit-cell parameters are calculated to be a=0.816212±0.000861nm, c=0.508083±0.000617nm and V=0.29314nm3. The absorption spectrum and fluorescence spectrum of Dy3+: La3Ga5SiO14 crystal are measured at room temperature, and there are four emission transitions occurring at 479, 576, 662 and 754nm; however, the yellow emission transitions (4F9/2→6H13/2) at 576nm are more intense than others. The segregation coefficients of Dy3+ in La3Ga5SiO14 crystal were measured by X-ray fluorescence analysis. For 1mol% doping level in the melt, the distribution coefficient of Dy3+ was determined to be 0.432wt%.
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