Abstract
Hexadecafluorophthalocyanine (F16CuPc) and Cobalt phthalocyanone (CoPc) thin films of different thickness (20-200nm) have been grown by Molecular Beam Epitaxy (MBE) using different deposition rate (0.2 – 1.0 Å/s). For nanowire type growth lower deposition rate and for films of smooth surface higher deposition rate are found suitable. Charge transport (J~V) of CoPc and F16CuPc films is governed by bulk-limited processes with a bias dependent crossover from Ohmic to trap-free space-charge-limited conduction. The mobility (μ) values at 300 K were found 4.5 and 5.5 cm2 V−1 s−1 for CoPc and F16CuPc films respectively. Mechanism of reverse rectification behavior of an organic heterojunction comprising of CoPc and F16CuPc is explained by Kelvin Probe measurement.
Published Version
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