Abstract
Nominally undoped ZnSe and ZnS x Se 1- x and low-resistivity n-type ZnSe doped with aluminum has been grown epitaxially on GaAs substrates by a low temperature, low-pressure organometallic chemical vapor deposition (OM-CVD) process. The layers are typically ⩽5 μm thick and exhibit a strong bandedge photoluminescence peak dominated by the I 2 bound exciton line. This result indicates that ZnSe prepared by OM-CVD has a better quality than ZnSe prepared by most other methods where donor-acceptor pair bands and the self-activated (SA) PL dominate the PL spectrum. Recent results on p-type doping experiments suggest that nitrogen is a substitutional shallow acceptor with an activation energy of ∽110 meV. This paper discusses the merits of the OM-CVD process and compares the results obtained so far with those on ZnSe crystals or epitaxial layers prepared by other methods.
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