Abstract
Low-resistivity n-type ZnSe with p<0.05 W cm and n≳1017 cm−3 has been grown epitaxially on (100) GaAs substrates by a low-pressure low-temperature organometallic chemical vapor deposition process. Triethylaluminum is used as a dopant. The as-grown layers show a strong near-band-gap photoluminescence peak. The much weaker photoluminescence intensity at longer wavelength indicates that the concentration of deep centers is lower than in doped ZnSe prepared by other methods.
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