Abstract
Plasma-assisted molecular-beam epitaxial (RF-MBE) growth of InGaN films on both N- and Ga-polarity GaN underlayers was carried out. Clear evidence was obtained for the difference in the film quality between InGaN grown on the N- and Ga-polarity GaN underlayers, to which the Ga-polarity GaN is preferred. Based on this point, high-quality InGaN films were obtained on the Ga-polarity GaN underlayers with an In composition up to 0.36. Intense photoluminescence (PL) emissions from the InGaN films were observed. Comparing the PL peak energy and the In composition determined by X-ray diffraction, it was found that the band-gap bowing parameter of InGaN films depends on the In composition.
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