Abstract
High-quality InGaN films were successfully grown on a Ga-polarity GaN underlayer by plasma-assisted molecular-beam epitaxy (rf-MBE) with good reproducibility. X-ray diffraction (XRD) results showed that there was no phase separation of In with the In mole fraction up to 0.36. Intense photoluminescence emissions from the InGaN films were obtained. Clear evidence was obtained for the difference in the quality between InGaN films grown on the Ga-polarity and those grown on N-polarity GaN buffer layers, in which the Ga-polarity GaN buffer is preferred. Our results provide a basis for fabricating high-quality InGaN/(Al, Ga)N heterostructures for optical and electronic device applications by rf-MBE.
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