Abstract

Zinc cadmium sulfide (ZnxCd1−xS) nanoflower structure was grown for the first time on glass substrates by microwave-assisted chemical bath deposition with two preparation stages. The first stage was at 80°C for 20min, and the second was at 95°C. Scanning electron microscopy images showed that the nanoflower structure grown on the thin films covered the substrates. The zinc ratio (x) was 0.72 in the ZnxCd1−xS nanoflowers and 0.30 in the thin film. X-ray diffraction analysis revealed that ZnxCd1−xS nanocrystalline structure had a hexagonal wurtzite phase. The optical bandgap of the prepared ZnxCd1−xS nanocrystalline structure calculated from the optical absorption was 2.66eV. Photoluminescence spectra showed two main emission peaks located at 383 and 478nm. An aluminum grid was deposited onto the prepared ZnxCd1−xS nanocrystalline structure by thermal evaporation to fabricate a photodetector device. The photoelectric properties of the Al/ZnxCd1−xS device were investigated by the current–voltage characteristic and photoresponse analyses. Under illumination by 365 and 405nm light and 5V bias, the device had faster rise and decay times, but the device was more sensitive to 405nm than 365nm.

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