Abstract
AbstractTitanium oxide (TiO2) and titanium‐tantalum oxide (Ti‐Ta‐O) thin films are deposited by liquid injection (LI) metal‐organic (MO) CVD using metal amide‐malonate complexes, [Ti(NR2)2(dbml)2], and tantalum, [Ta(NMe2)4(dbml)] (R = Me, Et; dbml = di‐tert‐butylmalonato). TiO2 and Ti‐Ta‐O films are deposited on Si(100) in the temperature ranges 350–650 °C and 500–700 °C, respectively. The structure, morphology, and chemical composition of the films are evaluated by X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Rutherford backscattering spectroscopy (RBS), and X‐ray photoelectron spectroscopy (XPS). The electrical properties of the films, namely the dielectric properties, are assessed by carrying out capacitance‐voltage (C‐V) measurements on metal‐oxide‐semiconductor (MOS) capacitor structures.
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