Abstract
The monolithic integration of GaAs and Si devices is highly attractive for very high speed LSI and optoelectronic integrated circuits. To accomplish this, the epitaxial growth of GaAs films on Si substrates has been successfully realized. However, in the GaAs/Si structure, the conductive nature of the silicon substrate results in a severe transmission line loss [1,2]. To help solve this problem, we suggest to grow GaAs film on SOI (silicon on insulator) substrate for microwave device application. This GaAs/SOI structure will have low transmission line loss and excellent radiation hardness. In this paper, we present some cross-section SEM and TEM data and discuss the transmission line loss and radiation hardness of this multilayered structure.
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