Growth and characterization of MgxZn1−xO films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Abstract

We report on the structural and optical properties of non polar a-plane MgxZn1−xO (0⩽x⩽0.57) films on r-plane sapphire substrates grown by plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction (RHEED) revealed a formation of cubic MgO phase when an Mg concentration increases. Room temperature (RT) photoluminescence (PL) and transmission electron microscopy consistently revealed the formation of cubic MgO phase from the Mg0.21Zn0.79O film. The Mg0.11Zn0.89O film showed a band edge emission at ∼360nm, which is a shorter wavelength than the ZnO (∼373nm), from the RT PL measurements. Photoluminescence excitation (PLE) measurements at RT showed that band-gap energies of MgxZn1−xO films could be tuned up to ∼4.65eV (∼270nm) although cubic MgO phase were mixed for high Mg concentration. For the single phase wurtzite MgZnO film, band-gap energy of 3.48eV was obtained from the Mg0.11Zn0.89O film.