Abstract
Piezoelectric zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (MgxZn1−xO) films are deposited on r-plane (011¯2) sapphire (Al2O3) substrates using the hybrid deposition technology by combining metal-organic chemical vapor deposition (MOCVD) and sputtering. An ultra-thin ZnO buffer is first grown on r-Al2O3 by MOCVD technique, followed by a thick piezoelectric MgxZn1−xO (0⩽x⩽0.3) film deposited using RF sputtering. The sputtering targets are made by mixing ZnO and MgO powders in appropriate composition ratio, and nickel oxide (NiO) powder (2wt%) is added as the compensation dopant to achieve piezoelectricity. The as-deposited MgxZn1−xO films have a-plane (112¯0) orientation in a wurtzite crystal structure. The crystallinity of the films is further improved by annealing at 600–700°C in oxygen ambient. It is found that a ZnO thin buffer layer and post-deposition annealing process significantly improve the film’s piezoelectric properties. The c-axis of the MgxZn1−xO film lies in the plane of the s...
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