Abstract
High purity GaAs bulk crystals were grown by liquid phase electroepitaxy (LPEE). One inch diameter more than 4 mm thick ingots were free of polycrystalline edges and Ga inclusions. Typical free carrier concentration was in the 10 14 cm -3 range. Low temperature photoluminescence (PL) measurements identified the Si acceptor as the dominant residual impurity which was distributed very uniformly throughout the ingots. In addition, a correlation was established between residual impurity concentration and key growth parameters, such as temperature, baking time of the Ga-As solution, and the solution volume.
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