Abstract
The characterisation of thick (>10 μm) InP layers prepared by liquid phase epitaxy with Pr, Dy and Tb rare earth element (REE) addition in the growth melt for applications in radiation detector structures is reported. A significant improvement of all the studied parameters with increasing concentration of REE up to critical value (0.25 wt%) was observed. The structural defect density was reduced by one order of magnitude and the residual impurity concentration by three and a half order of magnitude (< 1015 cm–3). The conductivity has been changed from n to p-type when REE exceeded certain concentration limit in the melt (0.15 wt% for Pr, 0.05 wt% for Tb and 0.03 wt% for Dy). The low-temperature photoluminescence (PL) spectra narrowed and the corresponding fine lines were resolved. Comparison of PL peaks of n and p- type conducting layers with the obtained electrical data leads to the conclusion that the dominant acceptor impurity for the n to p-type crossover is Ge for Pr addition and Mn for Tb and Dy addition.
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