Abstract
Specific features of rare-earth-oxides (PrOx, TbOx , Tm2O3, Gd2O3 and Eu 2O3) and Gd are employed to improve physical properties of InP layers. The InP layers were grown by liquid phase epitaxy (LPE) on (100)-oriented single crystal InP substrates with rare-earth element (RE) addition to the growth melt. The surface morphology and defect density was monitored by optical and scanning electron microscopy, the evaluation of electrical properties was gained from C-V characteristics and Hall measurements, and the low-temperature photoluminescence spectroscopy was used to study the optical properties. Significant improvement of all studied layer parameters with increasing amount of RE in the melt was observed right to critical value of RE concentration. The residual impurity concentration was reduced by up to three orders of magnitude, photoluminescence spectra were markedly narrowed and fine spectral features were resolved. The conductivity changed from n- to p-type when certain limit of RE concentration in the melt was exceeded for majority of studied REs
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
