Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation

Abstract

Physical and electrical properties of hafnium silicate (HfSixOy) dielectric films prepared by room-temperature UV/ozone (O3) oxidation of hafnium silicide (HfSi2) are reported. Angle-resolved x-ray photoelectron spectroscopy was used to determine chemical bonding at the film interface and within the bulk film. These films, with 12 at. % Hf composition, have a dielectric constant (κ) of ∼8–9 and exhibit a flat-band voltage shift of 60 mV. The leakage current density at VFB+1 V is 4.7×10−5 A/cm2 for a 4.7-nm-thick film (capacitance equivalent thickness=2.6 nm) and breakdown strength was >8 MV/cm.