Abstract
We study the growth of in-plane SiGe alloy nanowires by molecular beam epitaxy on Si substrates using the vapor-liquid-solid mechanism. These horizontal nanowires grow from liquid AuSi seeds which are obtained by annealing Au layers deposited on clean Si(001) surfaces. By continuously supplying Ge to the liquid droplets, an epitaxial process takes place, where wires crawl along <110> directions of the Si substrate, giving rise to the reproducible achievement of self-assembled in-plane SiGe nanowires. The morphology of the obtained nanostructures is characterized by scanning electronic and atomic force microscopies, and their composition and strain status is evaluated by micro-Raman imaging.
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