Abstract
Growth behavior of epitaxial CoSi 2(001) films on clean Si(001) surfaces and oxidized Si(001) surfaces with oxygen coverages below 2 ML has been investigated by scanning tunneling microscopy. In the solid-phase epitaxy of 3 ML-thick Co on clean Si surfaces at 530°C, rectangular-shaped CoSi 2(001) three-dimensional (3D) islands elongated along the 〈110〉 direction were grown on thermally stable two-dimensional layers of CoSi 2(001). This fact suggests that the CoSi 2/Si(001) epitaxial growth obeys a Stranski–Krastanov-like mode. The shape of 3D islands is considered to be explained by energetics to reduce the surface energy of CoSi 2. Moreover, it is found that oxygen atoms act as a kind of surfactant to lower the surface energy of CoSi 2. Almost pinhole-free and atomically-flat epitaxial CoSi 2(001) films with a thickness of 6 ML can be realized by solid-phase epitaxy under the condition of an annealing temperature of 470°C and oxygen coverages of 1–2 ML.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
