Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition

Abstract

Thin aluminum oxide (Al 2O 3) films were grown by plasma-assisted atomic layer controlled deposition (PAALD) method using Dimethylethylamine alane ((CH 3) 2 (C 2H 5)N:AlH 3) (DMEAA). Al was deposited by PAALD method, then the Al films were oxidized into Al 2O 3 by the plasma oxidation in the same chamber without breaking the vacuum. Al 2O 3 thin films of 15 nm thickness were prepared by repetition of the above mentioned process. Thus, prepared Al 2O 3 thin films showed a refractive index of 1.68. The thickness and the refractive index fluctuation of the film over a 4-in. wafer were ±2.3% and ±1.9%, respectively, for atomic layer controlled deposited films. The leakage current density and breakdown field were measured to be about 10 −8 A/cm 2 at 1 and 7 MV/cm, respectively.