Abstract
Thin aluminum oxide (Al2O3) films were grown by the plasma-assisted atomic layer controlled deposition (PAALD) method using Dimethylethylamine alane [(CH3)2(C2H5)N:AlH3] (DMEAA). Al was deposited by the PAALD method, then the Al films were oxidized into Al2O3 by plasma oxidation in the same chamber without breaking the vacuum. Al2O3 thin films of 15 nm thickness were prepared by repetition of this process. Thus prepared Al2O3 thin films exhibited a refractive index of 1.68. The thickness and the refractive index fluctuation of the film over a 4 inch wafer were ±2.3% and ±1.9%, respectively, for the deposited films. The leakage current density and breakdown field were measured to be about 10-8 A/cm2 at 1 MV/cm and 7 MV/cm, respectively. Considerable improvement of the electrical properties was realized by the post oxygen-plasma annealing at 200°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
