Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition

Abstract

The authors report the fabrication of GaAs-based quantum dot (QD) lasers grown by metal organic chemical vapor deposition above 1.30μm. They fabricated a laser diode with five stacked InAs∕Sb:GaAs(100) QD layers, grown by antimony-surfactant-mediated growth. Ground state lasing was obtained at 1.34μm, with internal quantum efficiency of 62%, internal loss of 4.5cm−1 and ground state modal gain above 12cm−1. Lasing above 1.30μm could be achieved because of the beneficial effects of antimony on both the coherent InAs∕Sb:GaAs QD density and the suppression of the emission blueshift, usually observed for InAs∕GaAs QDs during postgrowth annealing at 600°C.