Abstract
Visible-wavelength GaN-based photonic-crystal surface-emitting lasers (PCSELs) have attracted attention for various applications, such as materials processing, high-brightness illuminations, and displays. In this letter, we demonstrate GaN-based PCSELs at green wavelengths. We formed a photonic crystal (PC) in p-GaN and filled holes of the PC with SiO2 to ensure device stability. Through a current injection test under pulsed conditions and spectral analysis, we confirmed that the fabricated device possessed Γ-point single-mode oscillation at wavelengths above 505 nm. Our results have the potential to further expand the applications of PCSELs and semiconductor lasers in visible region.
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