Abstract
Abstract In this mini-review, we address the properties of graphitic carbon nitride (g-C3N4) hybrid thin films and their application, with particular attention to the modification of their photocatalytic or photovoltaic properties by the addition of chalcogenide materials, layered semiconductors, or perovskites. The defect states that give rise to active sites for photocatalysis are studied and related to the modification with the different materials. Bulk defects provided by some configurations are also studied. Moreover, the appropriate changes with perovskite materials, or the addition of carbon nitride to perovskites, boost the efficiency and stability of the devices, a subject that is studied in this work. Specific mechanisms of passivation provided by carbon nitride on photovoltaic devices are explained.
Published Version
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