Abstract
Resistive switching memory, flexible electronics equipment, and graphene-oxide-based devices have attracted much attention recently because of their possible application in next-generation electronic devices. In this study, a graphene-oxide-based flexible resistive switching memory is proposed. The flexibility and nonvolatility of the flexible device are demonstrated. A possible resistive switching filamentary model of the flexible device is also proposed. The experimental results indicate that the proposed graphene-oxide-based device is promising for use in next-generation nonvolatile memory and flexible electronics equipment.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
