Graphene nanoribbon field-effect transistor at high bias.

Mahdiar Ghadiry,Asrulnizam Abd Manaf,Mohsen Khaledian,Mehdi Saeidmanesh,Razali Ismail

doi:10.1186/1556-276x-9-604

Mahdiar Ghadiry, Asrulnizam Abd Manaf + Show 3 more

Open Access

https://doi.org/10.1186/1556-276x-9-604

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Abstract

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.

Highlights

Scaling in CMOS technology has been the key action to improve the power and performance of field-effect transistors [1]
Breakdown current density in graphene has been reported number of times mostly to study their application in on-chip electrical interconnects using several experimental approaches
The effect of carrier generation once used in graphene field-effect transistor in [9] is different with our work in two ways: first, we study the graphene nanoribbons (GNRs) field-effect transistor (GNRFET), and second, in this paper, we measure and model the breakdown voltage and current at high bias near breakdown, while that paper only derives the current

Summary

Background

Scaling in CMOS technology has been the key action to improve the power and performance of field-effect transistors [1]. There is a continuous need for thinner and shorter channels to resolve problems such as short channel effects in modern transistors. This scaling trend could not continue for long with silicon as the channel material. Breakdown current density in graphene has been reported number of times mostly to study their application in on-chip electrical interconnects using several experimental approaches. In [3], mechanically exfoliated graphene nanoribbons (GNRs) were found to display an impressive current-carrying capacity of more than 108 A/cm for the widths down to 16 nm. Breakdown voltage (BV) is estimated to be around 2.5 V for GNRs with widths of 22 nm. Chemical vapour deposition (CVD) was used by Lee et al [4] to fabricate

Methods

Results and discussion

Conclusions