Abstract
Grain boundaries in chalcopyrite-type thin films can be divided into (near) Σ3 (twin) and random boundaries. It is shown that Σ3 grain boundaries in a 110/201-textured Cu(In,Ga)Se 2 film may exhibit a preferential orientation perpendicular to the substrate, however, that this preferential orientation is not a common feature in 110/201-textured films. In general, it is not possible to draw conclusions about the Cu(In,Ga)Se 2 thin-film microstructure based on its texture and vice versa. From cathodoluminescence and electron backscatter diffraction measurements acquired on the same area of a CuInS 2 cross-section sample, it is concluded that the density of non-radiating recombination centers at random boundaries is substantially larger than that at Σ3 (twin) boundaries. Evaluation of reconstructed phase images from transmission electron microscopy focus series revealed considerably larger mean-inner potential wells at a random boundary as compared with Σ3 (twin) boundaries.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
