Abstract
This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack. For bipolar DC operation, the devices show gradual set and reset behavior with resistance ratio up to two orders of magnitude. By using nanosecond regime pulses (20 to 100 ns pulse width) of constant voltage amplitude, this gradual switching behavior could be utilized in tuning the resistance during set and reset spanning up to two orders of magnitude. This demonstrates that yttrium oxide based RRAM devices are alternative candidates for multibit operations and neuromorphic applications.
Highlights
Resistive random access memory (RRAM) has attracted a lot of attention for more than a decade, as a promising candidate for the generation of non-volatile memories
We report for the first time the coexistence of bipolar resistive switching and unipolar resistive switching within one stack combination based on yttrium oxide
The unipolar resistive switching (URS) is characterized by a high on-off-ratio with low switching variability, excellent data retention and direct current (DC) endurance
Summary
Resistive random access memory (RRAM) has attracted a lot of attention for more than a decade, as a promising candidate for the generation of non-volatile memories. A possible way to mimic the functionality of the human brain is by using a network of massively parallelized memristors with high connectivity This approach enables overcoming drawbacks of the von Neumann architecture in terms of data centric applications such as real time language or data recognition [25]. The ideal candidate needs to provide gradual set and reset operations with accessibility to a high density of resistance states. Due to the desired high device density, a low power consumption [29] (e.g. by low operation voltages with short pulses) while maintaining the stability of the resistance states (high temperature data retention, endurance, and immunity to noise) [30] is important, demanding further material optimization by engineering. Endurance plot of the bipolar resistive switching for more than 800 cycles with an average and minimum ratio of 640 and 80, respectively; (h) Ohmic and (i) Schottky-type conduction behavior of LRS and HRS, respectively
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