Abstract
We present the results of an angle integrated photoemission ( hv = 21.2eV) and Auger investigation of the effect of Au interlayers on the growth of the Si(111)-Pd interface. Gold does not remain totally blocked at the interface with increasing amounts of deposited Pd. As a consequence the same amount of Au (around 6 monolayers) acts as a promotor of Si-Pd mixing at low Pd coverages (below about 8 monolayers) and as an inhibitor at higher Pd coverages. The effect is dependent on the amount of Au so that Au at 10 monolayers is an inhibitor independent of the Pd coverage. The implications on the interface growth mechanism are discussed.
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